to ? 92s 1. emitter 2. collector 3. base to-92s plastic-encapsulate transistors KSA1150 transistor (pnp) features z general purpose switching application maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-0.1ma,i e =0 -40 v collector-emitter breakdown voltage v (br)ceo i c =-10ma,i b =0 -20 v emitter-base breakdown voltage v (br)ebo i e =-0.1ma,i c =0 -5 v collector cut-off current i cbo v cb =-25v,i e =0 -0.1 a emitter cut-off current i ebo v eb =-3v,i c =0 -0.1 a dc current gain h fe * v ce =-1v, i c =-100ma 40 400 collector-emitter saturation voltage v ce(sat) * i c =-500ma,i b =-50ma -0.4 v base-emitter saturation voltage v be (sat) * i c =-500ma,i b =-50ma -1.3 v transition frequency f t v ce =-6v,i c =-20ma, f=30mhz 150 mhz *pulse test: pulse width 350 s, duty cycle 2.0%. classification of h fe rank r o y g range 40-80 70-140 120-240 200-400 symbol parameter value unit v cbo collector-base voltage -40 v v ceo collector-emitter voltage -20 v v ebo emitter-base voltage -5 v i c collector current -0.5 a p c collector power dissipation 300 mw r ja thermal resistance from junction to ambient 416 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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